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The graph of Fig 23-5 shows ID as a function of EG for a hypothetical N-channel JFET The drain voltage, ED, is assumed to be constant When EG is fairly large and negative, the JFET is pinched off, and no current flows through the channel As EG gets less negative, the channel opens up, and ID begins flowing As EG gets still less negative, the channel gets wider and ID increases As EG approaches the point where the S-G junction is at forward breakover, the channel conducts as well as it possibly can If EG becomes positive enough so the S-G junction conducts, some of the current in the channel leaks out through the gate This is usually an unwanted phenomenon

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The FET Amplifies Voltage The best amplification for weak signals is obtained when EG is such that the slope of the curve in Fig 23-5 is the greatest This is shown roughly by the range marked X For power amplification, however, results are often best when the JFET is biased at or beyond pinchoff, in the range marked Y In either circuit shown in Fig 23-4, ID passes through the drain resistor Small fluctuations in EG cause large changes in ID, and these variations in turn produce wide swings in the dc voltage across R3 (in the circuit at A) or R 4 (in the circuit at B) The ac part of this voltage goes through capacitor C2, and appears at the output as a signal of much greater ac voltage than that of the input signal at the gate Drain Current versus Drain Voltage Do you suspect that the current ID, passing through the channel of a JFET, increases in a linear manner with increasing drain voltage ED This seems reasonable, but it is not what usually happens Instead, ID rises for awhile as ED increases steadily, and then ID starts to level off The current ID can be plotted graphically as a function of ED for various values of EG When this is done, the result is a family of characteristic curves for the JFET The graph of Fig 23-6 shows a family of characteristic

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curves for a hypothetical N-channel device The graph of ID versus EG, one example of which is shown in Fig 23-5, is also an important specification that engineers consider when choosing a JFET for a particular application

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